Characterisation of surface and near-surface regions in high-purity Cz Si

被引：2

作者：

Castaldini, A

Cavalcoli, D

Cavallini, A

Minarelli, T

Susi, E

机构：

[1] Univ Bologna, INFM, IT-40127 Bologna, Italy

[2] Univ Bologna, Dept Phys, IT-40127 Bologna, Italy

[3] CNR, Ist Lamel, IT-40129 Bologna, Italy

来源：

GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY | 2002年 / 82-84卷

关键词：

B deactivation; deep traps; DLTS; hydrogen; wet-etching;

D O I：

10.4028/www.scientific.net/SSP.82-84.747

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Bulk, surface, and near surface regions of B doped, Cz grown, Si wafers have been characterised by electrical methods. The starting material was standard, 6" and 8" Cz Si wafers and high quality wafers with a low concentration of vacancy clusters [1]. The effects of chemical and thermal treatments on the electrical properties of the starting wafers have been investigated.

引用

页码：747 / 752

页数：6

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