A 2.6 GHz Class-E Power Amplifier Design

被引:0
|
作者
Wang, Yun [1 ]
Tang, Xiaohong [1 ]
机构
[1] Univ Elect Sci & Technol China, Sch Elect Engn, Chengdu 611731, Sichuan, Peoples R China
关键词
Power amplifier; high efficiency; TD-LTE; Class-E; source/load Pull;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A design of switching power amplifier (PA) with high efficiency and considerable output power is re ported. This power amplifier is based on commercial available GaN HEMT de vice. Design process based on Source/Load Pull technique is described in detail. The simulation results show that the proposed amplifier achieves drain efficiency of 85%, power added efficiency of 82.5% and 40 dBm output power at 2.6 GHz. This power amplifier could be applied to TD-LTE base station.
引用
收藏
页码:332 / 335
页数:4
相关论文
共 50 条
  • [1] Class-E Power Amplifier Design at 2.5 GHz using a Packaged Transistor
    Collins, Gayle F.
    Wood, John
    2013 IEEE TOPICAL CONFERENCE ON BIOMEDICAL WIRELESS TECHNOLOGIES, NETWORKS, AND SENSING SYSTEMS (BIOWIRELESS), 2013, : 82 - 84
  • [2] Class-E Power Amplifier Design at 2.5 GHz using a Packaged Transistor
    Collins, Gayle F.
    Wood, John
    2013 IEEE TOPICAL CONFERENCE ON POWER AMPLIFIERS FOR WIRELESS AND RADIO APPLICATIONS (PAWR), 2013, : 88 - 90
  • [3] Class-E Power Amplifier Design at 2.5 GHz using a Packaged Transistor
    Collins, Gayle F.
    Wood, John
    2013 IEEE RADIO AND WIRELESS SYMPOSIUM (RWS), 2013, : 259 - 261
  • [4] Design and Implementation of HEMT Based Class-E Power Amplifier for 60 Ghz
    Ramu, Rakshaka
    Malarvizhi, S.
    2016 INTERNATIONAL CONFERENCE ON COMMUNICATION AND SIGNAL PROCESSING (ICCSP), VOL. 1, 2016, : 1954 - 1958
  • [5] Class-E Power Amplifier Design at 2.5 GHz using a Packaged Transistor
    Collins, Gayle F.
    Wood, John
    2013 IEEE 13TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF), 2013, : 159 - 161
  • [6] Integrated 2.4 GHz class-E CMOS power amplifier
    Saari, V
    Juurakko, P
    Ryynänen, J
    Halonen, K
    2005 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2005, : 645 - 648
  • [7] Improved design technique of a broadband Class-E power amplifier at 2GHz
    Qin, Y.
    Gao, S.
    Butterworth, P.
    Korolkiewicz, E.
    Sambell, A.
    35TH EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3, CONFERENCE PROCEEDINGS, 2005, : 453 - 456
  • [8] Design and optimization of CMOS class-E power amplifier
    Zhan, X
    El-Masry, EI
    PROCEEDINGS OF THE 2003 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOL I: ANALOG CIRCUITS AND SIGNAL PROCESSING, 2003, : 325 - 328
  • [9] 2.4 GHz Class-E power amplifier with transmissionline harmonic terminations
    Mury, T.
    Fusco, V. F.
    Cantu, H.
    IET MICROWAVES ANTENNAS & PROPAGATION, 2007, 1 (02) : 267 - 272
  • [10] A 6.0-GHz low noise amplifier and A 6.0-GHz class-E power amplifier
    Yang, Hsin-Chia
    Chen, Po-Yu
    Wang, Chuei-Tang
    EDSSC: 2007 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, VOLS 1 AND 2, PROCEEDINGS, 2007, : 1005 - 1008