Effect of temperature and bias voltage on the conductance distribution of disordered 1d quantum wires

The statistical properties of the conductance of one-dimensional disordered systems are studied at finite bias voltage V and temperature T, in an independent-electron picture. We calculate the complete distribution of the conductance P(G) in different regimes of V, T within a statistical model of resonant tunneling transmission. We find that P(G) changes from the well-known log-normal distribution at T = 0 in the linear response regime to a Gaussian distribution at large V, T. The dependence on T and V of average quantities such as < G >, < InG >, is analyzed as well. Our analytical results are confirmed by numerical simulations. We also discuss the limits of validity of the model and conclude that the effects of finite T, V presented here should be observable.