Numerical and experimental investigation of sectional heater for improving multi-crystalline silicon ingot quality for solar cells
被引:14
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作者:
Rao, Senlin
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机构:
Xinyu Univ, Sch New Energy Sci & Engn, Xinyu 338004, Peoples R China
Key Lab Univ Jiangxi Silicon Mat, Xinyu 338004, Peoples R ChinaXinyu Univ, Sch New Energy Sci & Engn, Xinyu 338004, Peoples R China
Rao, Senlin
[1
,2
]
He, Liang
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h-index: 0
机构:
Key Lab Univ Jiangxi Silicon Mat, Xinyu 338004, Peoples R China
LDK Solar Co Ltd, Xinyu 338032, Peoples R ChinaXinyu Univ, Sch New Energy Sci & Engn, Xinyu 338004, Peoples R China
He, Liang
[2
,5
]
Zhang, Fayun
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h-index: 0
机构:
Xinyu Univ, Sch New Energy Sci & Engn, Xinyu 338004, Peoples R China
Key Lab Univ Jiangxi Silicon Mat, Xinyu 338004, Peoples R ChinaXinyu Univ, Sch New Energy Sci & Engn, Xinyu 338004, Peoples R China
Zhang, Fayun
[1
,2
]
Lei, Qi
论文数: 0引用数: 0
h-index: 0
机构:
Key Lab Univ Jiangxi Silicon Mat, Xinyu 338004, Peoples R China
LDK Solar Co Ltd, Xinyu 338032, Peoples R ChinaXinyu Univ, Sch New Energy Sci & Engn, Xinyu 338004, Peoples R China
Lei, Qi
[2
,5
]
Luo, Yufeng
论文数: 0引用数: 0
h-index: 0
机构:
Key Lab Univ Jiangxi Silicon Mat, Xinyu 338004, Peoples R China
Nanchang Univ, Sch Mech & Elect Engn, Nanchang 330031, Jiangxi, Peoples R China
East China Jiaotong Univ, Nanchang 330013, Jiangxi, Peoples R ChinaXinyu Univ, Sch New Energy Sci & Engn, Xinyu 338004, Peoples R China
Luo, Yufeng
[2
,3
,4
]
Xiong, Hanmeng
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机构:
Key Lab Univ Jiangxi Silicon Mat, Xinyu 338004, Peoples R ChinaXinyu Univ, Sch New Energy Sci & Engn, Xinyu 338004, Peoples R China
Xiong, Hanmeng
[2
]
Hu, Yun
论文数: 0引用数: 0
h-index: 0
机构:
Xinyu Univ, Sch New Energy Sci & Engn, Xinyu 338004, Peoples R China
Key Lab Univ Jiangxi Silicon Mat, Xinyu 338004, Peoples R ChinaXinyu Univ, Sch New Energy Sci & Engn, Xinyu 338004, Peoples R China
Hu, Yun
[1
,2
]
Huang, Xuewen
论文数: 0引用数: 0
h-index: 0
机构:
Xinyu Univ, Sch New Energy Sci & Engn, Xinyu 338004, Peoples R China
Key Lab Univ Jiangxi Silicon Mat, Xinyu 338004, Peoples R ChinaXinyu Univ, Sch New Energy Sci & Engn, Xinyu 338004, Peoples R China
Huang, Xuewen
[1
,2
]
Song, Botao
论文数: 0引用数: 0
h-index: 0
机构:
Key Lab Univ Jiangxi Silicon Mat, Xinyu 338004, Peoples R China
Nanchang Univ, Sch Mech & Elect Engn, Nanchang 330031, Jiangxi, Peoples R ChinaXinyu Univ, Sch New Energy Sci & Engn, Xinyu 338004, Peoples R China
Song, Botao
[2
,3
]
机构:
[1] Xinyu Univ, Sch New Energy Sci & Engn, Xinyu 338004, Peoples R China
[2] Key Lab Univ Jiangxi Silicon Mat, Xinyu 338004, Peoples R China
[3] Nanchang Univ, Sch Mech & Elect Engn, Nanchang 330031, Jiangxi, Peoples R China
[4] East China Jiaotong Univ, Nanchang 330013, Jiangxi, Peoples R China
[5] LDK Solar Co Ltd, Xinyu 338032, Peoples R China
Directional solidification;
Interfaces;
Growth from melt;
Solar cells;
DIRECTIONAL SOLIDIFICATION PROCESS;
MULTICRYSTALLINE SILICON;
OPTIMIZATION;
D O I:
10.1016/j.jcrysgro.2020.125606
中图分类号:
O7 [晶体学];
学科分类号:
0702 ;
070205 ;
0703 ;
080501 ;
摘要:
The sectional heater of industrial-scale directional solidification furnace was designed for improving the quality of the high performance multi-crystalline silicon ingots used for solar cell fabrication. A global numerical model was adopted to investigate the effect of the modified furnace on the thermal field distribution, the shape of the crystal-melt interface and the thermal stress distribution in the solidified silicon ingot during the directional solidification process. Simulation results indicate that the crystal-melt interface shape in the modified furnace with the sectional heater changes from convex at the earlier stage to slightly flat at the later stage, and the thermal stress level at the bottom corner of the solidified ingots is clearly lower than that in the conventional furnace. Furthermore, the designed furnace with the sectional heater was built and experiments corresponding to the numerical simulations were carried out. It was found that a more uniform minority carrier lifetime distribution, lower dislocation cluster density, and lower oxygen concentration were obtained for the silicon ingot grown using the modified furnace. Additionally, the average conversion efficiency of the solar cells fabricated using the grown ingots was evaluated, and it was found that a higher efficiency was obtained for the cells fabricated using the ingots obtained with the modified furnace (18.64%) compared to that for the cells fabricated using the ingots obtained with the conventional furnace (18.54%).
机构:
Univ Sci & Technol China, Dept Appl Chem, Hefei 230026, Anhui, Peoples R China
LDK Solar Co Ltd, Xinyu 338032, Peoples R China
Natl Photovolta Engn Res Ctr, Xinyu 338032, Peoples R ChinaUniv Sci & Technol China, Dept Appl Chem, Hefei 230026, Anhui, Peoples R China
He, Liang
Lei, Qi
论文数: 0引用数: 0
h-index: 0
机构:
LDK Solar Co Ltd, Xinyu 338032, Peoples R China
Natl Photovolta Engn Res Ctr, Xinyu 338032, Peoples R China
Nanchang Univ, Inst Photovolta, Nanchang 330031, Jiangxi, Peoples R ChinaUniv Sci & Technol China, Dept Appl Chem, Hefei 230026, Anhui, Peoples R China
Lei, Qi
Rao, Senlin
论文数: 0引用数: 0
h-index: 0
机构:
Xinyu Univ, Sch New Energy Sci & Engn, Xinyu 338004, Peoples R ChinaUniv Sci & Technol China, Dept Appl Chem, Hefei 230026, Anhui, Peoples R China
Rao, Senlin
Mao, Wei
论文数: 0引用数: 0
h-index: 0
机构:
LDK Solar Co Ltd, Xinyu 338032, Peoples R China
Natl Photovolta Engn Res Ctr, Xinyu 338032, Peoples R ChinaUniv Sci & Technol China, Dept Appl Chem, Hefei 230026, Anhui, Peoples R China
Mao, Wei
Luo, Hongzhi
论文数: 0引用数: 0
h-index: 0
机构:
LDK Solar Co Ltd, Xinyu 338032, Peoples R China
Natl Photovolta Engn Res Ctr, Xinyu 338032, Peoples R ChinaUniv Sci & Technol China, Dept Appl Chem, Hefei 230026, Anhui, Peoples R China
Luo, Hongzhi
Xu, Yunfei
论文数: 0引用数: 0
h-index: 0
机构:
LDK Solar Co Ltd, Xinyu 338032, Peoples R China
Natl Photovolta Engn Res Ctr, Xinyu 338032, Peoples R ChinaUniv Sci & Technol China, Dept Appl Chem, Hefei 230026, Anhui, Peoples R China
Xu, Yunfei
Zhou, Cheng
论文数: 0引用数: 0
h-index: 0
机构:
LDK Solar Co Ltd, Xinyu 338032, Peoples R China
Natl Photovolta Engn Res Ctr, Xinyu 338032, Peoples R ChinaUniv Sci & Technol China, Dept Appl Chem, Hefei 230026, Anhui, Peoples R China
Zhou, Cheng
Li, Jianmin
论文数: 0引用数: 0
h-index: 0
机构:
LDK Solar Co Ltd, Xinyu 338032, Peoples R China
Natl Photovolta Engn Res Ctr, Xinyu 338032, Peoples R ChinaUniv Sci & Technol China, Dept Appl Chem, Hefei 230026, Anhui, Peoples R China
Li, Jianmin
Ding, Junling
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h-index: 0
机构:
East China Jiaotong Univ, Sch Mechatron & Vehicle Engn, Nanchang 330013, Jiangxi, Peoples R ChinaUniv Sci & Technol China, Dept Appl Chem, Hefei 230026, Anhui, Peoples R China
Ding, Junling
Cheng, Xiaojuan
论文数: 0引用数: 0
h-index: 0
机构:
LDK Solar Co Ltd, Xinyu 338032, Peoples R China
Natl Photovolta Engn Res Ctr, Xinyu 338032, Peoples R ChinaUniv Sci & Technol China, Dept Appl Chem, Hefei 230026, Anhui, Peoples R China
机构:
Korean Atom Energy Res Inst, Gyeongu Si 780904, Gyeongsangbuk D, South KoreaKorean Atom Energy Res Inst, Gyeongu Si 780904, Gyeongsangbuk D, South Korea
Park, Kwang Mook
Lee, Myoung Bok
论文数: 0引用数: 0
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机构:
Daegu Technopk Nano Convergence Pract Applicat Ct, Taegu 704801, South KoreaKorean Atom Energy Res Inst, Gyeongu Si 780904, Gyeongsangbuk D, South Korea
Lee, Myoung Bok
Choi, Sie Young
论文数: 0引用数: 0
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机构:
Kyungpook Natl Univ, Grad Sch Elect Engn & Comp Sci, Taegu, South KoreaKorean Atom Energy Res Inst, Gyeongu Si 780904, Gyeongsangbuk D, South Korea
机构:
Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, Beijing 100083, Peoples R China
Hu, ZH
Liao, XB
论文数: 0引用数: 0
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机构:Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, Beijing 100083, Peoples R China
Liao, XB
Liu, ZM
论文数: 0引用数: 0
h-index: 0
机构:Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, Beijing 100083, Peoples R China
Liu, ZM
Xia, CF
论文数: 0引用数: 0
h-index: 0
机构:Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, Beijing 100083, Peoples R China
Xia, CF
Chen, TJ
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h-index: 0
机构:Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, Beijing 100083, Peoples R China