Raman E1, E1+Δ1 resonance in unstrained germanium quantum dots

被引：3
|
作者：
Talochkin, AB [1 ]
Suprun, SP [1 ]
Efanov, AV [1 ]
Kozhemyako, IG [1 ]
Shumskii, VN [1 ]
机构：
[1] Russian Acad Sci, Inst Semicond Phys, Siberian Div, Novosibirsk 630090, Russia
来源：
JETP LETTERS | 2001年 / 73卷 / 06期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/1.1374265
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Raman scattering by optical phonons in unstrained Ge quantum dots obtained in GaAs/ZnSe/Ge/ZnSe structures was studied using molecular beam epitaxy. A shift in the E-1, E-1 + Delta (1) resonance energy due to the quantization of the spectrum of electron and hole states in quantum dots was observed. The properties observed were explained with the use of a simplest model of localization with allowance for the spectrum of Ge electron states. (C) 2001 MAIK "Nauka/Interperiodica".
引用
收藏
页码：297 / 300
页数：4
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