GaN HEMTs for 5G Base Station Applications

被引：0
|
作者：
Nakajima, Shigeru [1 ]
机构：
[1] Sumitomo Elect Ind Ltd, Semicond Innovat Business Unit, Yokohama, Kanagawa, Japan
来源：
2018 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2018年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Many challenges have been overcome in developing highly reliable, cost effective and excellent performance GaN HEMTs. We have focused on GaN HEMT on SiC, and have been shipping commercial GaN HEMTs for the base station market since 2005. The state of the art GaN HEMT has penetrated into the 4G/LTE base station. The efficiency advantage, based on its material properties will also attract 5G power amplifier designers. This paper explains our development history, and overviews the GaN HEMT power amplifiers in the 5G era.
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页数：4
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