Band Gap of Pb(Fe0.5Nb0.5)O3 Thin Films Prepared by Pulsed Laser Deposition

被引：5

作者：

Bartek, Nicole ^{[1
]}

Shvartsman, Vladimir V. ^{[1
]}

Bouyanfif, Houssny ^{[2
]}

Schmitz, Alexander ^{[3
]}

Bacher, Gerd ^{[3
]}

Olthof, Selina ^{[4
]}

Sirotinskaya, Svetlana ^{[5
]}

Benson, Niels ^{[5
]}

Lupascu, Doru C. ^{[1
]}

机构：

[1] Univ Duisburg Essen, Inst Mat Sci, Ctr Nanointegrat Duisburg Essen CENIDE, D-45141 Essen, Germany

[2] Univ Picardie Jules Verne, Lab Phys Matiere Condensee UR2081, F-80039 Amiens, France

[3] Univ Duisburg Essen, Elect Mat & Nanostruct & Ctr Nanointegrat Duisbur, D-47057 Duisburg, Germany

[4] Univ Cologne, Inst Phys Chem, D-50939 Cologne, Germany

[5] Univ Duisburg Essen, Inst Technol Nanostruct, Ctr Nanointegrat Duisburg Essen CENIDE, D-47057 Duisburg, Germany

来源：

MATERIALS | 2021年 / 14卷 / 22期

关键词：

lead iron niobate; thin films; pulsed laser deposition; band gap; optical properties; photovoltaics; LANTHANUM-ZIRCONATE-TITANATE; PHOTOVOLTAIC PROPERTIES; ELECTRONIC-STRUCTURE; OPTICAL-PROPERTIES; LEAD; EFFICIENCY; PBTIO3; DEVICE; PB(ZR;

D O I：

10.3390/ma14226841

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Ferroelectric materials have gained high interest for photovoltaic applications due to their open-circuit voltage not being limited to the band gap of the material. In the past, different lead-based ferroelectric perovskite thin films such as Pb(Zr,Ti)O-3 (Pb,La)(Zr,Ti)O-3 and PbTiO3 were investigated with respect to their photovoltaic efficiency. Nevertheless, due to their high band gaps they only absorb photons in the UV spectral range. The well-known ferroelectric PbFe0.5Nb0.5O3 (PFN), which is in a structure similar to the other three, has not been considered as a possible candidate until now. We found that the band gap of PFN is around 2.75 eV and that the conductivity can be increased from 23 S/mu m to 35 S/mu m during illumination. The relatively low band gap value makes PFN a promising candidate as an absorber material.

引用

页数：9

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