GIDL behavior of p- and n-MuGFET devices with different TiN metal gate thickness and high-k gate dielectrics

被引：7

作者：

Galeti, M. ^{[1
]}

Rodrigues, M. ^{[1
]}

Martino, J. A. ^{[1
]}

Collaert, N. ^{[2
]}

Simoen, E. ^{[2
]}

Claeys, C. ^{[2
,3
]}

机构：

[1] Univ Sao Paulo, LSI, PSI, USP, BR-05508010 Sao Paulo, Brazil

[2] IMEC, B-3001 Louvain, Belgium

[3] Katholieke Univ Leuven, EE Depart, B-3001 Louvain, Belgium

来源：

SOLID-STATE ELECTRONICS | 2012年 / 70卷

基金：

巴西圣保罗研究基金会;

关键词：

SOI Multiple Gate FET (MuGFET); TiN metal gate; High-k dielectric; GIDL; Channel width; INDUCED-DRAIN-LEAKAGE; EFFECTIVE WORK FUNCTION;

D O I：

10.1016/j.sse.2011.11.015

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work studies the gate-induced drain leakage (GIDL) in p- and n-MuGFET structures with different TiN metal gate thickness and high-k gate dielectrics. As a result of this analysis, it was observed that a thinner TiN metal gate showed a larger GIDL due to the different gate oxide thickness and a reduced metal gate work function. In addition, replacing SiON by a high-k dielectric (HfSiON) results for nMuGFETs in a decrease of the GIDL On the other hand, the impact of the gate dielectric on the GIDL for p-channel MuGFETs is marginal. The effect of the channel width was also studied, whereby narrow fin devices exhibit a reduced GIDL current in spite of the larger vertical electric field expected for these devices. Finally, comparing the effect of the channel type, an enhanced GIDL current for pMuGFET devices was observed. (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：44 / 49

页数：6

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