Comprehensive study of Ga Activation in Si, SiGe and Ge with 5 x 10-10 Ω.cm2 Contact Resistivity Achieved on Ga doped Ge using Nanosecond Laser Activation

被引：0

作者：

Wang, Lin-Lin ^{[1
,2
,3
]}

Yu, Hao ^{[1
,3
]}

Schaekers, M. ^{[1
]}

Everaert, J. -L. ^{[1
]}

Franquet, A. ^{[1
]}

Douhard, B. ^{[1
]}

Date, L. ^{[4
]}

Borniquel, J. del Agua ^{[4
]}

Hollar, K. ^{[4
]}

Khaja, F. A. ^{[4
]}

Aderhold, W. ^{[4
]}

Mayur, A. J. ^{[4
]}

Lee, J. Y. ^{[5
]}

van Meer, H. ^{[5
]}

Mocuta, D. ^{[1
]}

Horiguchi, N. ^{[1
]}

Collaert, N. ^{[1
]}

De Meyer, K. ^{[1
,3
]}

Jiang, Yu-Long ^{[2
]}

机构：

[1] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

[2] Fudan Univ, Shanghai, Peoples R China

[3] KULeuven, Leuven, Belgium

[4] Appl Mat Inc, Sunnyvale, CA USA

[5] Appl Mat Inc, Gloucester, MA USA

来源：

2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2017年

关键词：

DIFFUSION; GALLIUM; GERMANIUM; BORON;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ga diffusion and activation in Si, Si0.4Ge0.6 and Ge are studied comprehensively. Optimal Ga activation conditions for Si0.4Ge0.6 and Ge feature a low thermal budget: Ga is highly activated at 400 degrees C in Ge and at 500 degrees C in Si0.4Ge0.6 using a 1min rapid thermal annealing (RTA); the activation is further boosted using short-duration high-temperature nanosecond laser activation (NLA). A low Ti/p-Ge contact resistivity (rho(c)) of 1.2x10(-9) Omega.cm(2) is approached using Ga doping and 400 degrees C RTA activation, while a record-low rho(c) for p-Ge down to 5 x 10(-10) Omega.cm(2) is achieved using NLA for Ga activation.

引用

页数：4

共 14 条

[1] Sub-10-9 Ω.cm2 Contact Resistivity on p-SiGe Achieved by Ga Doping and Nanosecond Laser Activation
Everaert, J-L.
Schaekers, M.
Yu, H.
Wang, L. -L.
Hikavyy, A.
Date, L.
Borniquel, J. del Agua
Hollar, K.
Khaja, F. A.
Aderhold, W.
Mayur, A. J.
Lee, J. Y.
van Meer, H.
Jiang, Y. -L.
De Meyer, K.
Mocuta, D.
Horiguchi, N.
2017 SYMPOSIUM ON VLSI TECHNOLOGY, 2017, : T214 - T215
[2] Sub-10-9 Ω . cm2 Specific Contact Resistivity (Down to 4.4 x 10-10 Ω . cm2) for Metal Contact on Ga and Sn Surface-Segregated GeSn Film
Wu, Ying
Wang, Wei
Masudy-Panah, Saeid
Li, Yang
Han, Kaizhen
He, Liuhuiquan
Zhang, Zheng
Lei, Dian
Xu, Shengqiang
Kang, Yuye
Gong, Xiao
Yeo, Yee-Chia
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (12) : 5275 - 5281
[3] 1.5x10-9 Ω.cm2 Contact Resistivity on Highly Doped Si:P Using Ge Pre-amorphization and Ti Silicidation
Yu, H.
Schaekers, M.
Rosseel, E.
Peter, A.
Lee, J. -G.
Song, W. -B.
Demuynck, S.
Chiarella, T.
Ragnarsson, L-A.
Kubicek, S.
Everaert, J.
Horiguchi, N.
Barla, K.
Kim, D.
Collaert, N.
Thean, A. V. -Y.
De Meyer, K.
2015 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2015,
[4] Record Low Contact Resistivity (4.4x10-10Ω-cm2) to Ge Using In-situ B and Sn Incorporation by CVD With Low Thermal Budget (≤400°C) and Without Ga
Lu, Fang-Liang
Tsai, Chung-En
Huang, Chih-Hsiung
Ye, Hung-Yu
Lin, Shih-Ya
Liu, C. W.
2019 SYMPOSIUM ON VLSI TECHNOLOGY, 2019, : T178 - T179
[5] Record Low Contact Resistivity to Ge:B (8.1x10-10Ω-cm2) and GeSn:B (4.1x10-10Ω-cm2) with Optimized [B] and [Sn] by In-situ CVD Doping
Lu, Fang-Liang
Liu, Yi-Chun
Tsai, Chung-En
Ye, Hung-Yu
Liu, C. W.
2020 IEEE SYMPOSIUM ON VLSI TECHNOLOGY, 2020,
[6] Surface Ga-boosted Boron-doped Si0.5G0.5 using In-situ CVD Epitaxy: Achieving 1.1 x 1021 cm-3 Active Doping Concentration and 5.7x 10-10 Ω-cm2 Contact Resistivity
Xu, Haiwen
Zhang, Jishen
Lima, Lucas P. B.
Margetis, Joe
Khazaka, Rami
Xie, Qi
Tolle, John
Wang, Chengkuan
Wang, Haibo
Zhou, Zuopu
Kong, Qiwen
Gong, Xiao
2020 IEEE SYMPOSIUM ON VLSI TECHNOLOGY, 2020,
[7] Record Low Specific Contact Resistivity (1.2x10-9 Ω-cm2) for P-type Semiconductors: Incorporation of Sn into Ge and In-Situ Ga Doping
Wu, Ying
Luo, Sheng
Wang, Wei
Masudy-Panah, Saeid
Lei, Dian
Gong, Xiao
Liang, Gengchiau
Yeo, Yee-Chia
2017 SYMPOSIUM ON VLSI TECHNOLOGY, 2017, : T218 - T219
[8] Ultra-low specific contact resistivity (1.4 x 10-9 Ω.cm2) for metal contacts on in-situ Ga-doped Ge0.95Sn0.05 film
Wu, Ying
Luo, Sheng
Wang, Wei
Masudy-Panah, Saeid
Lei, Dian
Liang, Gengchiau
Gong, Xiao
Yeo, Yee-Chia
JOURNAL OF APPLIED PHYSICS, 2017, 122 (22)
[9] Ultra-low (1.2x10-9 Ωcm2) p-Si0.55Ge0.45 Contact Resistivity (ρc) using Nanosecond Laser Anneal for 7nm nodes and Beyond
Chang, Chih-Yang
Khaja, Fareen Adeni
Hollar, Kelly E.
Rao, K. V.
Lazik, Christopher
Jin, Miao
Zhou, Hongwen
Hung, Raymond
Huang, Yi-Chiau
Chung, Hua
Mayur, Abhilash
Kim, Namsung
2017 17TH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT), 2017, : 23 - 26
[10] Low Contact Resistivity (1.5x10-8 Ω-cm2) of Phosphorus-doped Ge by In-situ Chemical Vapor Deposition Doping and Laser Annealing
Huang, S. -H.
Lu, F. -L.
Liu, C. W.
2016 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA), 2016,

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