Design of ZnS antireflective microstructures for mid- and far-infrared applications

被引：11
|
作者：
Yoo, Y. J. [1 ]
Chang, K. S. [2 ]
Hong, S. W. [3 ]
Song, Y. M. [1 ]
机构：
[1] Pusan Natl Univ, Dept Elect Engn, Busan 609735, South Korea
[2] Korea Basic Sci Inst, Ctr Analyt Instrumentat Dev, Taejon 305806, South Korea
[3] Pusan Natl Univ, Dept Cognomechatron Engn, Busan 609735, South Korea
来源：
OPTICAL AND QUANTUM ELECTRONICS | 2015年 / 47卷 / 06期
基金：
新加坡国家研究基金会;
关键词：
Subwavelength grating; Antireflection; Microstructure; Zinc sulfide; BROAD-BAND ANTIREFLECTION; SILICON; FABRICATION;
D O I：
10.1007/s11082-015-0143-0
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present broadband antireflective microstructures (AMSs) for high-performance imaging systems in mid- and far-infrared wavelength ranges. Diffraction efficiencies of AMSs on ZnS substrates were calculated using a rigorous coupled wave analysis method. The results show the effect of height, period, and shape of AMSs on the reflection characteristics. We also discuss the optimum geometry of AMSs by considering fabrication tolerances.
引用
收藏
页码：1503 / 1508
页数：6
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