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- [1] Effect of Oxygen Vacancy on the Electronic Structure and Electrical Properties of HfO2/Si Interface PROCEEDINGS OF 2020 INTERNATIONAL SYMPOSIUM ON ELECTRICAL INSULATING MATERIALS (ISEIM 2020), 2020, : 425 - 428
- [3] Electronic structure and optical properties of monoclinic HfO2 with oxygen vacancy Tan, T. (tantt@nwpu.edu.cn), 1600, Science Press (42):