Electronic structure of Pt/HfO2 interface with oxygen vacancy

被引:6
|
作者
Cho, Eunae [1 ]
Han, Seungwu [1 ]
机构
[1] Ewha Womans Univ, Dept Phys, Seoul 120750, South Korea
关键词
First-principles calculation; Metal-oxide interface; Oxygen vacancy; Charge transfer; INITIO MOLECULAR-DYNAMICS; METAL;
D O I
10.1016/j.mee.2009.11.009
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Using first-principles calculations, we study the electronic structures of Pt/HfO2 interface in the presence of oxygen vacancy. The energetics and charge transfer are examined when the oxygen vacancy is at various distances from the interface. It is found that the oxygen vacancy is strongly attracted to the interface and the charge transfer decreases monotonically as the vacancy moves away from the interface, albeit the amount of charge transfer is small. The charge transfer results in the decrease of the effective work function of Pt, consistent with the vacancy mechanism to explain the shift in the flat-band voltage. (C) 2009 Published by Elsevier B.V.
引用
收藏
页码:3407 / 3410
页数:4
相关论文
共 50 条
  • [1] Effect of Oxygen Vacancy on the Electronic Structure and Electrical Properties of HfO2/Si Interface
    Yao, Jiachi
    Qu, Guanghao
    Zhao, Zhonghua
    Zhang, Guowei
    Min, Daomin
    Liu, Jie
    Li, Shengtao
    PROCEEDINGS OF 2020 INTERNATIONAL SYMPOSIUM ON ELECTRICAL INSULATING MATERIALS (ISEIM 2020), 2020, : 425 - 428
  • [2] Electronic Structure and Optical Properties of Monoclinic HfO2 with Oxygen Vacancy
    Zha Gangqiang
    Tang Sanqi
    Tan Tingting
    RARE METAL MATERIALS AND ENGINEERING, 2013, 42 (08) : 1576 - 1580
  • [3] Electronic structure and optical properties of monoclinic HfO2 with oxygen vacancy
    Tan, T. (tantt@nwpu.edu.cn), 1600, Science Press (42):
  • [4] On the identification of the oxygen vacancy in HfO2
    Clark, S. J.
    Lin, L.
    Robertson, J.
    MICROELECTRONIC ENGINEERING, 2011, 88 (07) : 1464 - 1466
  • [5] Oxygen migration at Pt/HfO2/Pt interface under bias operation
    Nagata, T.
    Haemori, M.
    Yamashita, Y.
    Yoshikawa, H.
    Iwashita, Y.
    Kobayashi, K.
    Chikyow, T.
    APPLIED PHYSICS LETTERS, 2010, 97 (08)
  • [6] Migration of oxygen vacancy in HfO2 and across the HfO2/SiO2 interface:: A first-principles investigation
    Capron, Nathalie
    Broqvist, Peter
    Pasquarello, Alfredo
    APPLIED PHYSICS LETTERS, 2007, 91 (19)
  • [7] Oxygen vacancy and hydrogen in amorphous HfO2
    Sklenard, Benoit
    Cvitkovich, Lukas
    Waldhoer, Dominic
    Li, Jing
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2023, 56 (24)
  • [8] Oxidation of the Pt/HfO2 interface:: The role of the oxygen chemical potential
    Gavrikov, A. V.
    Knizhnik, A. A.
    Bagatur'yants, A. A.
    Potapkin, B. V.
    Fonseca, L. R. C.
    Stoker, M. W.
    Schaeffer, J.
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (01)
  • [9] Influence of oxygen vacancies on the electronic structure of HfO2 films
    Cho, Deok-Yong
    Lee, Jae-Min
    Oh, S. -J.
    Jang, Hoyoung
    Kim, J. -Y.
    Park, J. -H.
    Tanaka, A.
    PHYSICAL REVIEW B, 2007, 76 (16)
  • [10] Deuterium Trapping at the Pt/HfO2 Interface
    Driemeier, C.
    Kanter, M. M.
    Miotti, L.
    Soares, G. V.
    Baumvol, I. J. R.
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2009, 12 (04) : G9 - G12