> 6 MW peak power at 532 nm from passively Q-switched Nd:YAG/Cr4+:YAG microchip laser

被引：86
|
作者：
Bhandari, Rakesh [1 ]
Taira, Takunori [1 ]
机构：
[1] Laser Res Ctr, Inst Mol Sci, Okazaki, Aichi 4448585, Japan
来源：
OPTICS EXPRESS | 2011年 / 19卷 / 20期
关键词：
GENERATION; COMPOSITE; IGNITION; BEAM;
D O I：
10.1364/OE.19.019135
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Megawatt peak power, giant pulse microchip lasers are attractive for wavelength conversion, provided their output is linearly polarized. We use a [110] cut Cr4+:YAG for passively Q-switched Nd:YAG microchip laser to obtain a stable, linearly polarized output. Further, we optimize the conditions for second harmonic generation at 532 nm wavelength to achieve > 6 MW peak power, 1.7 mJ, 265 ps, 100 Hz pulses with a conversion efficiency of 85%. (C) 2011 Optical Society of America
引用
收藏
页码：19135 / 19141
页数：7
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