A nonorthogonal tight-binding model for hydrocarbon molecules and nanostructures

被引:4
|
作者
Zhao, J. [1 ]
Guo, X.
Wen, B.
机构
[1] Dalian Univ Technol, State Key Lab Mat Modificat Laser Elect & Ion Bea, Dalian 116024, Peoples R China
[2] Dalian Univ Technol, Coll Adv Sci & Technol, Dalian 116024, Peoples R China
[3] Dalian Univ Technol, Dept Engn Mech, Dalian 116024, Peoples R China
[4] Dalian Univ Technol, State Key Lab Struct Analysis Ind Equuipment, Dalian 116024, Peoples R China
[5] Dalian Univ Technol, Dept Mat Engn, Dalian 116024, Peoples R China
基金
中国国家自然科学基金;
关键词
tight-binding; hydrocarbon; carbon nanostructures; binding energy;
D O I
10.1080/08927020701203706
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In spirit of extended- Huckel approximations, we have developed a nonorthogonal tight-binding total energy model for hydrocarbons with only a few adjustable parameters. Our model reproduces the geometry structures, binding energies, on-site charge transfer and vibrational frequencies of a variety of hydrocarbon molecules reasonably well. Comparative calculations on carbon fullerenes and nanotubes using tight-binding model and density functional theory demonstrate the potential of applying this model to large scale simulations of carbon nanostructures.
引用
收藏
页码:703 / 709
页数:7
相关论文
共 50 条
  • [1] Nonorthogonal tight-binding model for hydrocarbons
    Maslov, M. M.
    Podlivaev, A. I.
    Openov, L. A.
    PHYSICS LETTERS A, 2009, 373 (18-19) : 1653 - 1657
  • [2] Nonorthogonal tight-binding model for germanium
    Bernstein, N
    Mehl, MJ
    Papaconstantopoulos, DA
    PHYSICAL REVIEW B, 2002, 66 (07):
  • [3] Tight-binding model for semiconductor nanostructures
    Schulz, S
    Czycholl, G
    PHYSICAL REVIEW B, 2005, 72 (16)
  • [4] A nonorthogonal tight-binding total energy model for molecular simulations
    Zhao, JJ
    Lu, JP
    PHYSICS LETTERS A, 2003, 319 (5-6) : 523 - 529
  • [5] TRANSFERABLE NONORTHOGONAL TIGHT-BINDING PARAMETERS FOR SILICON
    ALLEN, PB
    BROUGHTON, JQ
    MCMAHAN, AK
    PHYSICAL REVIEW B, 1986, 34 (02): : 859 - 862
  • [7] TRANSFERABLE NONORTHOGONAL TIGHT-BINDING SCHEME FOR SILICON
    MENON, M
    SUBBASWAMY, KR
    PHYSICAL REVIEW B, 1994, 50 (16): : 11577 - 11582
  • [8] A transferable nonorthogonal tight-binding model of germanium: application to small clusters
    Zhao, JJ
    Wang, JL
    Wang, GH
    PHYSICS LETTERS A, 2000, 275 (04) : 281 - 286
  • [9] Nonorthogonal tight-binding Hamiltonians for defects and interfaces in silicon
    Bernstein, N
    Kaxiras, E
    PHYSICAL REVIEW B, 1997, 56 (16): : 10488 - 10496
  • [10] Energetic, vibrational, and electronic properties of silicon using a nonorthogonal tight-binding model
    Bernstein, N
    Mehl, MJ
    Papaconstantopoulos, DA
    Papanicolaou, NI
    Bazant, MZ
    Kaxiras, E
    PHYSICAL REVIEW B, 2000, 62 (07): : 4477 - 4487