Coherently controlled ballistic charge currents in unbiased bulk silicon and single-walled carbon nanotubes

被引：0

作者：

Betz, M. ^{[1
]}

Costa, L. ^{[1
]}

Spasenovic, M. ^{[1
]}

Newson, R. W. ^{[1
]}

Menard, J. -M. ^{[1
]}

Sames, C. ^{[1
]}

Bristow, A. D. ^{[1
]}

van Driel, H. M. ^{[1
]}

机构：

[1] Univ Toronto, Dept Phys, Toronto, ON M5S 1A7, Canada

来源：

ULTRAFAST PHENOMENA XVI | 2009年 / 92卷

关键词：

PHOTOCURRENT;

D O I：

暂无

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Phase-related fundamental and second harmonic femtosecond pulses induce directional charge motion in group IV materials at 300 K. THz emission reveals peak current densities of 0.5 kA/cm(2) in silicon and currents of 1 nA per carbon nanotube.

引用

页码：256 / 258

页数：3

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