Compact Bandpass Filter using Integrated Passive Devices Fabrication Process on GaAs Substrate for Global System for Mobile Communications

In this work, a compact global system for mobile communications (GSM) bandpass filter is presented using integrated passive device technology on a GaAs substrate. An integrated passive device technology has been developed to obtain high performance, high integration, high yield, and low cost in RF/microwave communication system. We showed good RF performances with compact size and low cost compared with other researchers' work One transmission zero near the edge of the passband is achieved to obtain a good selectivity. Good measured results validates the correctness of the proposed design approach, which shows that the central frequency of the proposed filter is located at 2.5 GHz as desired, with 3 dB fractional bandwidths of 14.0 %. The return loss is greater than 16.5 dB, while insertion loss is less than 0.9 dB.