Reliability/Uniformity improvement induced by an ultrathin TiO2 insertion in Ti/HfO2/Pt resistive switching memories

被引：25
|
作者：
Jiang, Ran [1 ]
Han, Zuyin [1 ]
Du, Xianghao [1 ]
机构：
[1] Shandong Univ, Sch Phys, Shanda Southern Rd 27, Jinan 250100, Peoples R China
来源：
MICROELECTRONICS RELIABILITY | 2016年 / 63卷
基金：
中国国家自然科学基金;
关键词：
RRAM; Hafnium oxide; Reliability; IMPACT; PERFORMANCE;
D O I：
10.1016/j.microrel.2016.05.013
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Reliability/Uniformity of resistance switching in Ti/HfO2/Pt memory structure was improved by inserting an interfacial layer of 5 nm-thick TiO2 between Ti and 45 nm-thick HfO2. As a native oxide of Ti, TiO2, effectively limits the disorder migration of oxygen from HfO2 to Ti layer, and provides the more chemically-stable and morphologically-uniform interfaces with both the Ti electrode and the HfO2 layer. Meanwhile, more stable resistive switching was observed in Ti/TiO2/HfO2/Pt than that in Ti/HfO2/Pt memory, and the random variation during endurance test observed in Ti/HfO2/Pt was also greatly limited in Ti/TiO2/HfO2/Pt memory. From these results, a thin TiO2 insertion between the Ti electrode with the HfO2 active layer, could greatly improve the reliability/uni-formity of the Ti/HfO2/Pt memory devices. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码：37 / 41
页数：5
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