Synchrotron radiation process and in-situ observation technique: Infrared reflection absorption spectroscopy

被引:2
|
作者
Urisu, T [1 ]
机构
[1] Inst Mol Sci, Okazaki, Aichi 444, Japan
来源
关键词
synchrotron radiation processing; etching; infrared reflection absorption spectroscopy; nanometric process; core electron excitation process;
D O I
10.1117/12.309588
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Synchrotron radiation (SR) stimulated etching shows unique material selectivities. SR decomposition of silicon hydrides on Si(100) surface measured by infrared reflection absorption spectroscopy also shows unique reaction selectivities; SiH2 and SiH3 are decomposed but SiH is not. These material selectivities are qualitatively explained by the quenching of the excited electronic states. The material selectivity, reaction selectivity by the excitation energy tuning to the specific core electron excitations, and extremely high spatial resolutions owing to the short wavelength nature, SR stimulated etching is a potentially powerful technique for the nanometric processes.
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页码:342 / 348
页数:7
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