The Cu2ZnSnSe4 thin films solar cells synthesized by electrodeposition route

被引：58

作者：

Li, Ji ^{[1
]}

Ma, Tuteng ^{[1
]}

Wei, Ming ^{[1
]}

Liu, Weifeng ^{[1
]}

Jiang, Guoshun ^{[1
]}

Zhu, Changfei ^{[1
]}

机构：

[1] Univ Sci & Technol China, Dept Mat Sci & Engn, CAS Key Lab Mat Energy Convers, Hefei 230026, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2012年 / 258卷 / 17期

关键词：

Cu2ZnSnSe4; Thin films; Electrodeposition; Selenization; Capacitance-voltage; COMPLEXING AGENT; PRECURSORS; SULFURIZATION; ABSORBERS;

D O I：

10.1016/j.apsusc.2012.03.006

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

An electrodeposition route for preparing Cu2ZnSnSe4 thin films for thin film solar cell absorber layers is demonstrated. The Cu2ZnSnSe4 thin films are prepared by co-electrodeposition Cu-Zn-Sn metallic precursor and subsequently annealing in element selenium atmosphere. The structure, composition and optical properties of the films were investigated by X-ray diffraction (XRD), Raman spectrometry, energy dispersive spectrometry (EDS) and UV-VIS absorption spectroscopy. The Cu2ZnSnSe4 thin film with high crystalline quality was obtained, the band gap and absorption coefficient were 1.0 eV and 10(-4) cm(-1), which is quite suitable for solar cells fabrication. A solar cell with the structure of ZnO:Al/i-ZnO/CdS/Cu2ZnSnSe4/Mo/glass was fabricated and achieved an conversion efficiency of 1.7%. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：6261 / 6265

页数：5

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