A novel SiGe-on-insulator IMOS device with reduced bias voltages

被引：0
|
作者：
Nematian, Hanied [1 ]
Fathipour, Morteza [1 ]
Hajghasem, Hassan S. [2 ]
Farbiz, Farzan [3 ]
机构：
[1] Univ Tehran, ECE Dept, Modeling & Simulat Lab, Tehran 14174, Iran
[2] Res Inst Minist ICT, Tehran, Iran
[3] Univ Illinois, Urbana, IL USA
来源：
2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2 | 2007年
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：110 / +
页数：2
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