Solid-state electrochemical nanoimprinting of copper

被引:16
|
作者
Schultz, Peter L. [1 ]
Hsu, Keng H. [1 ]
Fang, Nicholas X. [1 ]
Ferreira, Placid M. [1 ]
机构
[1] Univ Illinois, Ctr Nanoscale Chem Elect Mech Manufact Syst, Urbana, IL 61801 USA
来源
基金
美国国家科学基金会;
关键词
D O I
10.1116/1.2799977
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
For the first time, the authors report highly selective dry etching of copper with a resolution of 80 nm using solid-state electrochemical nanoimprint technology. By exploiting the high mobility of copper ions in solid electrolytes such as copper sulfide, they are able to obtain etching rates up to 5 angstrom/s without the use of contaminating liquids and excessive mechanical forces. Given the dearth of dry etch processes for metals in general and the fact that nanopatterning of metals is typically achieved indirectly using multistep processes, such a direct patterning technique offers potential application in a number of process steps in metallic interconnects and other nanoscale device fabrication. (C) 2007 American Vacuum Society.
引用
收藏
页码:2419 / 2424
页数:6
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