Pulsed Laser Deposited MoS2 for the Fabrication of MoS2/Graphene Photodetector

Since the 21st century, with the continuous development of technology, much tremendous progress has been made in the microelectronics industry. When the channel of the device is reduced to the nanometer scale, the silicon-based semiconductor has approached its physical limit, and the performance begins to decrease, so the traditional silicon-based semiconductor industry has entered the research bottleneck. Compared with traditional silicon-based semiconductors, two-dimensional materials are increasingly used in the semiconductor industry due to their ultra-thin atomicity and semiconductor characteristics. As a typical representative of two-dimensional materials, MoS2 is widely used for device preparation, including gas sensors, phototransistors, flexible thin film transistors, lithium-ion battery electrodes and heterojunction diodes. However, achieving high-quality, controllable large-area preparation of MoS2 is still a major problem, which seriously hinders the development of MoS2 in the application field. In this paper, pulsed laser deposition is used to prepare large-sized MoS2 by controlling different deposition time.