Optimization strategies for radiation induced grafting of 4-vinylpyridine onto poly(ethylene-co-tetraflouroethene) film using Box-Behnken design

被引:12
|
作者
Nasef, Mohamed Mahmoud [1 ]
Shamsaei, Ezzatollah [1 ]
Ghassemi, Payman [1 ]
Aly, Amgad Ahmed [1 ]
Yahaya, Abdul Hamid [2 ]
机构
[1] Univ Teknologi Malaysia, Inst Hydrogen Econ, Kuala Lumpur 54100, Malaysia
[2] Univ Malaya, Dept Chem, Fac Sci, Kuala Lumpur 50603, Malaysia
关键词
Radiation induced grafting; 4-vinylpyridine; poly(ethylene-co-tetrafluoroethylene); optimization of grafting parameters; Box-Behnken factorial design; CROSS-LINKED POLYTETRAFLUOROETHYLENE; POLYMER ELECTROLYTE MEMBRANES; SODIUM STYRENE SULFONATE; ION-EXCHANGE MEMBRANES; COPOLYMERIZATION; MONOMERS;
D O I
10.1016/j.radphyschem.2011.12.019
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The radiation induced grafting of 4-vinylpyridine (4-VP) onto poly(ethylene-co-tetrafluoroethene) (ETFE) was optimized using the Box-Behnken factorial design available in the response surface method (RSM). The optimized grafting parameters: absorbed dose, monomer concentration, grafting time and reaction temperature were varied in four levels to quantify their effect on the grafting yield (CV). The validity of the statistical model was supported by the small deviation between the predicted (GY=61%) and experimental (GY=57%) values. The optimum conditions for enhancing GY were determined at the following values: monomer concentration of 48 vol%, absorbed dose of 64 kGy, reaction time of 4 h and temperature of 68 C. A comparison was made between the optimization model developed for the present grafting system and that for grafting of 1-vinylimidazole (1-VIm) onto ETFE to confirm the validly and reliability of the Box-Behnken for the optimization of various radiation induced grafting reactions. Fourier transform infrared (FTIR), thermogravimetric analysis (TGA) and X-ray diffraction (XRD) were used to investigate the properties of the obtained films and provide evidence for grafting. (C) 2011 Elsevier Ltd. All rights reserved.
引用
收藏
页码:437 / 444
页数:8
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