Effect of boron-doping on the electroluminescence properties of CdS/Si heterostructure based on Si nanoporous pillar array

被引：3
|
作者：
Yan, Ling Ling [1 ]
Cai, Hong Xin [1 ]
Chen, Liang [1 ]
Li, Xin Jian [2 ,3 ]
机构：
[1] Henan Polytech Univ, Coll Phys & Chem, Jiaozuo 454000, Peoples R China
[2] Zhengzhou Univ, Dept Phys, Zhengzhou 450052, Peoples R China
[3] Zhengzhou Univ, Phys Mat Lab, Zhengzhou 450052, Peoples R China
来源：
MATERIALS LETTERS | 2016年 / 181卷
基金：
中国国家自然科学基金;
关键词：
Nanocomposites; Electrical properties; Silicon nanoporous pillar array; CdS; Boron-doping; Electroluminescence; SOLAR-CELLS; THIN-FILMS; PHOTOLUMINESCENCE; MECHANISM;
D O I：
10.1016/j.matlet.2016.06.025
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A series of CdS/Si nanoheterostructures were prepared by growing boron-doped CdS thin films on silicon nanoporous pillar array (Si-NPA). The structural, photoluminescence (PL) and electroluminescence (EL) properties of CdS/Si-NPA were studied as a function of [B]/[Cd] ratio. Our results disclosed that their emission intensity and wavelength can be tuned by boron-doping concentration. These results indicated that B-doped CdS/Si-NPA nanoheterostructure would be a prospective system in constructing Si based optoelectronic devices. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码：113 / 115
页数：3
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