A Novel 3D Driver Integrated Silicon Carbide Half-bridge Power Module with Low Stray Inductance

The third-generation power semiconductor silicon carbide half bridge power modules are widely applicable in various application scenarios, such as motor drive, photovoltaics and wind power inverters, tractions, electric vehicles, etc.. They possesses the advantages of high breakdown voltage, smaller dynamic parameters, and high operating temperature that is beneficial for power electronics system designs with higher switching frequency and improved power density. However, the external customized gate driver circuities designs could results in a relatively large parasitic inductance and resistance. In this work, a novel silicon carbide half-bridge power module (1200V/240A) with advanced packaging technology is proposed, which is a first-of-its-kind solution to tackle the coupled electrical-thermal challenges, including the monolithic low parasitic gate driver circuitry integration, ultra-low module stray inductance, improved power efficiency, thermal conductivity, and enhanced reliability, for advanced power electronics systems applications. The electrical and package design features will he thoroughly discussed. Electrical simulation results revealed that the gate drive loop resistance and inductance are respectively less than 7 m Omega and 60 BM and the power module stray inductance is only around 10 nil (around 33% reduction compared to commercially available products). Moreover, the simulated junctionto-case thermal resistance is only 0.0785 K/W, and is favourable for simplifying the stringent cooling system design in power systems.