A NUMERICAL ANALYSIS ON THE THERMAL EFFECT IN GaN BASED GUNN DIODE

被引:0
|
作者
Huang, Yang-Hong [1 ]
Wang, Ying [1 ]
Yang, Lin-An [1 ]
Zhai, Hui-Fang [1 ]
Wang, Zhi-Zhe [1 ]
Hao, Yue [1 ]
机构
[1] Xidian Univ, Sch Microelect, Xian 710071, Peoples R China
来源
2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2014年
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present a numerical analysis on the electric and thermal behaviors of GaN n(+)n(-)nn(+) Gunn oscillations based on Energy Balance (EB) model and Non-isothermal Energy Balance (NEB) models. We can achieve the influence of lattice heating on the Gunn oscillations based on NEB model, as it is based on the coupling of an energy-balance model with a thermal model for the description of the lattice temperature everywhere in the device, which makes it possible to optimize the device.
引用
收藏
页数:3
相关论文
共 50 条
  • [1] Thermal Modeling of the GaN-based Gunn Diode at Terahertz Frequencies
    Wang, Ying
    Ao, Jinping
    Liu, Shibin
    Hao, Yue
    APPLIED SCIENCES-BASEL, 2019, 9 (01):
  • [2] Thermal resistance of Gunn diode
    TAKANASHI H
    YANAGISAWA S
    Fujitsu Scientific and Technical Journal, 1971, 7 (04): : 149 - 163
  • [3] Characteristics of a GaN-based Gunn diode for THz signal generation
    Parida, R. K.
    Agrawala, N. C.
    Dash, G. N.
    Panda, A. K.
    JOURNAL OF SEMICONDUCTORS, 2012, 33 (08)
  • [4] Characteristics of a GaN-based Gunn diode for THz signal generation
    R K Parida
    N C Agrawala
    G N Dash
    A K Panda4
    半导体学报, 2012, 33 (08) : 37 - 43
  • [5] Optimization of wurtzite GaN-based Gunn diode as terahertz source
    Lee, Wen Zhao
    Ong, Duu Sheng
    Choo, Kan Yeep
    2018 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS (ICSE 2018), 2018, : 173 - 176
  • [6] GaN-based Gunn diode for high frequency signal generation
    Panda, A. K.
    Agrawal, N. C.
    Parida, R. K.
    Dash, G. N.
    PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007, 2007, : 514 - +
  • [7] Thermal analysis of GaN-based laser diode package
    Hwang, W. J.
    Lee, T. H.
    Nam, O. H.
    Kim, H. K.
    Kwak, J. S.
    Park, Y. J.
    Shin, M. W.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 2006, 3 (06): : 2174 - 2177
  • [8] Analysis of the thermal and frequency properties of a Gunn diode with a multiring cathode
    Kanevskij, V.I.
    Chajka, V.E.
    Izvestiya VUZ: Radioelektronika, 1999, 42 (01): : 38 - 45
  • [9] Studies on the Characteristics of GaN-based Gunn Diode for THz Signal Generation
    Panda, A. K.
    Dash, G. N.
    Agrawal, N. C.
    Parida, R. K.
    APMC: 2009 ASIA PACIFIC MICROWAVE CONFERENCE, VOLS 1-5, 2009, : 1565 - +
  • [10] Physical analysis of thermal effects on the optimization of GaN Gunn diodes
    Tang, X.
    Rousseau, M.
    Dalle, C.
    De Jaeger, J. C.
    APPLIED PHYSICS LETTERS, 2009, 95 (14)