High-resolution XEOL spectroscopy setup at the X-ray absorption spectroscopy beamline P65 of PETRA III

被引：1

作者：

Levcenko, S. ^{[1
]}

Biller, R. ^{[2
]}

Pfeiffelmann, T. ^{[1
]}

Ritter, K. ^{[1
]}

Falk, H. H. ^{[1
]}

Wang, T. ^{[3
]}

Siebentritt, S. ^{[3
]}

Welter, E. ^{[2
]}

Schnohr, C. S. ^{[1
]}

机构：

[1] Univ Leipzig, Felix Bloch Inst Festkorperphys, Linnestr 5, D-04103 Leipzig, Germany

[2] Deutsch Elektronen Synchrotron DESY, Notkestr 85, D-22607 Hamburg, Germany

[3] Univ Luxembourg, Dept Phys & Mat Sci, Lab Photovolta, Rue Brill 41, L-4422 Belvaux, Luxembourg

来源：

JOURNAL OF SYNCHROTRON RADIATION | 2022年 / 29卷 / Pt 5期

关键词：

XEOL; XAS; CuInSe2; ZnO; GaN; EXCITED OPTICAL LUMINESCENCE; SITE-SELECTIVE EXAFS; FINE-STRUCTURE; ORIGIN; ZNO;

D O I：

10.1107/S1600577522007287

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A newly designed setup to perform steady-state X-ray excited optical luminescence (XEOL) spectroscopy and simultaneous XEOL and X-ray absorption spectroscopy characterization at beamline P65 of PETRA III is described. The XEOL setup is equipped with a He-flow cryostat and state-of-the-art optical detection system, which covers a wide wavelength range of 300-1700 nm with a high spectral resolution of 0.4 nm. To demonstrate the setup functioning, low-temperature XEOL studies on polycrystalline CuInSe2 thin film, single-crystalline GaN thin film and single-crystalline ZnO bulk semiconductor samples are performed.

引用

页码：1209 / 1215

页数：7

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