Green electroluminescence from AIN: Tb thin film devices on glass

被引：7
|
作者：
Adachi, Daisuke [1 ]
Kitaike, Ryohei [1 ]
Ota, Jun [1 ]
Toyama, Toshihiko [1 ]
Okamoto, Hiroaki [1 ]
机构：
[1] Osaka Univ, Grad Sch Engn Sci, Dept Syst Innovat, Osaka 5608531, Japan
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2007年 / 18卷 / Suppl 1期
关键词：
D O I：
10.1007/s10854-007-9167-y
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Electroluminescence (EL) properties of AIN:Tb thin film EL device (TFELD) prepared on a glass substrate by a rf-magnetron sputtering method have been studied. The AIN:Tb emission layer consists of hexagonal (110)-oriented poly-crystals of AIN with a high transparency in visible region. Four emission peaks originating from D-5(4) -> F-7(j) (j = 6, 5, 4, 3) transitions of Tb3+ were found in both photoluminescence (PL) and EL spectra of the AIN:Tb thin film. The peak emission intensity of the D-5(4) -> F-7(6) transitions is almost the same magnitude with that of the D-5(4) -> F-7(5) transitions, being largely different from the intensity ratio of Tb(3+)in other host materials.
引用
收藏
页码：S71 / S74
页数：4
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