Hardness and elastic modulus measurements of A1N and TiN sub-micron thin films using the continuous stiffness measurement technique with FEM analysis

被引：0

作者：

Rawdanowicz, TA ^{[1
]}

Sankar, J ^{[1
]}

Narayan, J ^{[1
]}

Godbole, V ^{[1
]}

机构：

[1] N Carolina Agr & Technol State Univ, Dept Mech Engn, NSF, CAMSS, Greensboro, NC 27411 USA

来源：

THIN FILMS-STRESSES AND MECHANICAL PROPERTIES VIII | 2000年 / 594卷

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D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The hardnesses and elastic moduli of aluminum nitride (AIN) and titanium nitride (TIN) sub-micron thin films pulsed laser deposited (PLD) on silicon (111) were measured using nanoindentation based on a continuous stiffness measurement (CSM) technique. Thin film thicknesses, based on profile measurements of simultaneously grown step samples, are 210 nm and 180 nm with surface roughnesses of 12 nm and 2 nm for AlN and TiN, respectively. X-ray diffraction showed AIN as a highly textured polycrystalline AlN wurzite structure with a (0001) orientation and TiN as a cubic structure with a(lll) orientation. The CSM technique provided hardness and elastic modulus as a function of depth. Finite element modeling (FEM) aided in determining the optimum indenter contact depth at which the thin films behaved as a semiinfinite solid with negligible substrate induced artifacts. Hardnesses of these AIN and TiN thin films were, determined analytically, 25 GPa and 33 GPa, as compared to FEM results of 24 GPa and 30 Cpa, respectively. The elastic moduli measured 320 Cpa and 370 GPa for these AlN and TiN thin films, respectively.

引用

页码：507 / 512

页数：6