Improvement of the Process Overlay Control for sub 40nm DRAM

被引：0
|
作者：
Park, Sarohan [1 ]
Lee, Eun-Ha [1 ]
Shin, Eun-Kyoung [1 ]
Ryu, Yoon-Jung [1 ]
Shin, Hye-Jin [1 ]
Hwang, Seung-Hyun [1 ]
Lim, Hee-Youl [1 ]
Sun, Kyu-Tae [1 ]
Eom, Tae-Seung [1 ]
Kwak, Noh-Jung [1 ]
Park, Sung-Ki [1 ]
机构：
[1] Hynix Semicond Inc, R&D Div, Ichon Si 467701, Kyoungki Do, South Korea
来源：
METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XXIV | 2010年 / 7638卷
关键词：
overlay performance; high order overlay correction; process effect;
D O I：
10.1117/12.846489
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In recent years, DRAM technology node has shrunk below to 40nm HP (Half Pitch) patterning with significant progresses of hyper NA (Numerical Aperture) immersion lithography system and process development. Especially, the development of DPT (Double Patterning Technology) and SPT (Spacer Patterning Technology) can extend the resolution limit of lithography to sub 30nm HP patterning. However it is also necessary to improve the tighter overlay control for developing the sub 40nm DRAM because of small device overlap margin. Since new process technologies such as complex structure of DPT and SPT, new hard mask material and extreme CMP (Chemical Mechanical Planarization) process have also applied as design rule is decreased, the improvement of process overlay control is very important. In this paper, we have studied that the characterization of overlay performance for sub 40nm DRAM with actual experimental data. First, we have investigated the influence on the intra field overlay and inter field overlay with comparison of HOWA and HOPC and the improvement of inter field overlay residual errors. Then we have studied the process effects such as hard mask material, thermal process and CMP process that affect to overlay control.
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页数：8
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