Low frequency noise in InAlAs/InGaAs modulation doped field effect transistors with 50-nm gate length

We report on the low frequency [1/f and generation-recombination (GR)] noise in InAlAs/InGaAs modulation doped field effect transistors with a 50-nm gate length. The characteristic capture and emission times of the GR noise depended on the gate voltage. Measurements of the noise as a function of the gate voltage showed that the gate leakage current, contacts, and ungated sections of the channel did not contribute to the 1/f noise. The gate voltage dependence of the 1/f noise agreed well with the model of number of carriers fluctuations as a source of the 1/f noise. An effective density of traps responsible for the 1/f noise was found to be D-eff approximate to 2.7x10(12) cm(-2) eV(-1).