An accurate HJFET capacitance-voltage model for implementation with a circuit simulator

We present a new accurate HJFET capacitance model to implement with a circuit simulator, This is an analytical model that describes capacitance-voltage (C-V) characteristics over a wide supply voltage range, The model for a capacitance component due to two-dimensional electron gas (2-DEG) conduction is based on gradual channel approximation, and takes into account the gradual capacitance transition near the threshold voltage, It also takes into account the held dependence of the 2-DEG mobility, which is very strong for deep sub-micron devices, The model for parasitic MESFET capacitance is based on the formula for a Schottky diode, Since the model consists of physical parameters, it provides feedback between the fabrication process and circuit design, The simulated results agree well with the measurements.