Poly-silicon thin layer photodetector structures

被引：0
|
作者：
Budianu, E [1 ]
Purica, M [1 ]
Manea, E [1 ]
Kusko, M [1 ]
机构：
[1] Natl Inst Res & Dev Microtechnol, Bucharest 72225, Romania
来源：
2003 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS | 2003年
关键词：
D O I：
10.1109/SMICND.2003.1251366
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A photodetector structure based on thin poly-Si layers together with technological process and structure optoelectronic characterisation are presented. The optical improvement of the structure by the reflection of unabsorbed radiation on the backside and by the reflectance minimizing on the topside by antireflecting coating was analyzed. The structure optoelectronic characterization revealed a good sensibility of 60 muA/klx and a fast response.
引用
收藏
页码：151 / 154
页数：4
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