SrTiO3 insulator for low-voltage organic field-effect transistors

被引:1
|
作者
Yan, Hu [1 ]
Okuzaki, Hidenori [1 ]
机构
[1] Univ Yamanashi, Interdisciplinary Grad Sch Med & Engn, Kofu, Yamanashi 4008511, Japan
关键词
Organic semiconductor; Pentacene; Field-effect transistor; High-k insulator; Strontium titanate; THIN-FILM TRANSISTORS; DEPOSITION; TEMPERATURE; DIELECTRICS; PENTACENE; TRANSPORT; POLYMER; SILICON;
D O I
10.1016/j.synthmet.2011.06.002
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Organic field-effect transistors (FETs) are considered to be used as high-end electronics and low-end ones. In the low-end electronics such as radio-frequency identification tags and smart-cards the devices should be battery-powered and then need to operate at a few volts. Majority of the organic FETs reported to date, however, can only operate well at a voltage as high as similar to 100V. Three kinds of approaches have been mainly proposed and studied in order to achieve low-voltage organic FETs. First one is simply using a high-k insulator to obtain certain electric capacitance at lower gate voltages. Second one is using a nanometer-thick self-assembled monolayer of organic compound as the gate dielectric. Third one is using a polymer composite containing ionic liquid. Here we briefly review typical studies using the three approaches to achieve the low-voltage organic FETs in the first part of this subject review, and then we focus on our recent progress in the low-voltage organic FETs mainly using strontium titanate as a high-k insulator in the second part. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:1781 / 1786
页数:6
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