Highly integrated coupled cavity photonic crystal laser with on-chip power control on the AlGaIn/AsSb material system

被引：0

作者：

Mueller, M. ^{[1
]}

Bauer, A. ^{[1
]}

Lehnhardt, T. ^{[1
]}

Forchel, A. ^{[1
]}

机构：

[1] Univ Wurzburg, D-97074 Wurzburg, Germany

来源：

NANOTECHNOLOGY | 2008年 / 19卷 / 26期

关键词：

D O I：

10.1088/0957-4484/19/26/265203

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We present a multi-segment photonic crystal coupled cavity laser device on GaSb with a microstructured internal photodiode. This monolithically integrated power monitor is added as a third segment to a coupled cavity laser and is separated from the active device by six rows of two-dimensional photonic crystals, acting as highly reflecting mirrors. There is no additional fabrication step needed to integrate this feature into the coupled cavity laser, resulting in a highly integrated laser device of only 800 mu m length. The device with lasing wavelength around 1955 nm shows single mode emission over a tuning range of as large as 16 nm and exhibits output powers of up to 9 mW.

引用

页数：3

共 18 条

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