Enhancement of the efficiency of i-n-GaN light-emitting diodes by electrochemical etching

被引：0

作者：

Sidorov, VG ^{[1
]}

Drizhuk, AG ^{[1
]}

Shagalov, MD ^{[1
]}

Sidorov, DV ^{[1
]}

Usikov, AS ^{[1
]}

机构：

[1] Volgograd Polytech Inst, Volgograd, Russia

来源：

TECHNICAL PHYSICS LETTERS | 1999年 / 25卷 / 01期

关键词：

D O I：

10.1134/1.1262358

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An investigation was made of the electrochemical etching of i - n - GaN light-emitting diode structures in aqueous solutions of KOH and NaOH to remove parasitic low-resistivity layers and inclusions in the structures which shunt the active current flow channels through the structures and lower the electroluminescence intensity. The electroluminescence intensity of the structures increased by two or three orders of magnitude during the etching process. (C) 1999 American Institute of Physics. [S1063-7850(99)02601-4].

引用

页码：65 / 66

页数：2

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