Sub-Terahertz Emission from Field-Effect Transistors

被引：4

作者：

Yavorskiy, D. ^{[1
]}

Karpierz, K. ^{[1
]}

Kopyt, P. ^{[2
]}

Grynberg, M. ^{[1
]}

Lusakowski, J. ^{[1
]}

机构：

[1] Univ Warsaw, Fac Phys, L Pasteura 5, PL-02093 Warsaw, Poland

[2] Technol Univ Warsaw, Inst Radioelect, Nowowiejska 15-19, PL-00665 Warsaw, Poland

来源：

ACTA PHYSICA POLONICA A | 2017年 / 132卷 / 02期

关键词：

TRANSPORT;

D O I：

10.12693/APhysPolA.132.335

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Several commercially available field-effect GaInAs-based transistors were studied as emitters of electromagnetic radiation. The emitters were tested either at room or at liquid helium temperature. To spectrally analyse emitted radiation, we applied three different experimental techniques: a spectrum analyser with antennas and mixers, a Michelson interferometer and a magnetic-field-tunable InSb detector. We show that the emission consists of a fundamental frequency of 11.5 GHz and its multiple harmonics spanning the emission band up to about 400 GHz. Analysis of the results allows us to suggest that the emission is caused by a Gunn effect and a high harmonics content is related to a pulse-like time dependence of the current.

引用

页码：335 / 337

页数：3

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