Orientation dependence of phase memory relaxation in the V(IV) ion at high frequencies

被引：6

作者：

Jackson, Cassidy E. ^{[1
]}

Lin, Chun-Yi ^{[1
]}

van Tol, Johan ^{[2
]}

Zadrozny, Joseph M. ^{[1
]}

机构：

[1] Colorado State Univ, Dept Chem, 1301 Ctr Ave, Ft Collins, CO 80523 USA

[2] Natl High Magnet Field Lab, 1800 E Paul Dirac Dr, Tallahassee, FL 32310 USA

来源：

CHEMICAL PHYSICS LETTERS | 2020年 / 739卷

基金：

美国国家科学基金会;

关键词：

Phase memory relaxation; Coordination complexes; Pulsed electron paramagnetic resonance; ELECTRON-SPIN RELAXATION; LATTICE-RELAXATION; MOLECULAR QUBITS; COHERENCE TIMES; LONG COHERENCE; DYNAMICS; TEMPERATURE; COPPER(II); COMPLEXES; CENTERS;

D O I：

10.1016/j.cplett.2019.137034

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Understanding how magnetic relaxation depends on molecular orientation is a fundamental parameter for designing magnetic molecules for application. Herein we report the first use of pulsed high-frequency electron paramagnetic resonance spectroscopy (HFEPR, 120 and 240 GHz) to define the orientation dependence of phase memory relaxation in the S = 1/2 V(IV) complex (n-Bu3NH)(2)[V(C6H4O2)(3)]. We demonstrate a variation of 20% of the phase memory relaxation time (T-m) as a function of the orientation of the [V(C6H4O2)(3)](2-) molecule in the applied magnetic field. Ultimately, this work underlines an important design strategy for molecule-based quantum computing architectures.

引用

页数：5

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