Ultraviolet lasing from optically pumped BeMgZnSe quantum-well laser structures

被引：0

作者：

Niiyama, Y ^{[1
]}

Murata, T ^{[1
]}

Watanabe, M ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Informat Engn, Midori Ku, Yokohama, Kanagawa 2268502, Japan

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 14期

关键词：

D O I：

10.1063/1.2081121

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We achieved lasing of an optically pumped ultraviolet BeMgZnSe-based quantum-well laser grown closely lattice matched to a GaP substrate. A laser emission wavelength of 373 nm at 13 K was observed. The threshold excitation power density was 0.415 MW/cm(2) at 13 K. In addition, we have demonstrated lasing up to 130 K. This indicates that the BeMgZnSe compound is promising as a new candidate for ultraviolet (UV) laser diodes, which possess potential application for UV optoelectronic integrated circuits UV-OEICs on silicon substrates. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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