Air-bridge interconnection and bondpad process for non-planar compound semiconductor devices

被引：7
|
作者：
Ulliac, G
Garidel, S
Vilcot, JP
Tilmant, P
机构：
[1] THALES SYST AEROPORTES, F-78851 Elancourt, France
[2] CNRS, UMR 8520, IEMN, F-59652 Villeneuve Dascq, France
来源：
MICROELECTRONIC ENGINEERING | 2005年 / 81卷 / 01期
关键词：
interconnection technique; air-bridge bondpad; compound semiconductor; non-planar devices;
D O I：
10.1016/j.mee.2005.02.006
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a versatile metallic air-bridge process that can be used either for high relief compound semiconductor devices or interconnections schemes. Our technology uses conventional contact photolithography and does not require dry-etching techniques allowing a fast fabrication time, reliable production and cost effectiveness. It is based on the use of only one photoresist and one electroplating step. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：53 / 58
页数：6
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