PTCR behaviour of highly donor doped BaTiO3

被引：34
|
作者：
Urek, S [1 ]
Drofenik, M [1 ]
机构：
[1] Univ Ljubljana, Jozef Stefan Inst, Dept Ceram, Ljubljana 1111, Slovenia
来源：
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 1999年 / 19卷 / 6-7期
关键词：
La doped BaTiO3; grain boundary; defects; electrical properties; PTC devices;
D O I：
10.1016/S0955-2219(98)00343-4
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The electrical properties of donor doped BaTiO3 samples with a donor concentration >0.3 mol% were studied. Samples were sintered at a low partial pressure of oxygen in order to facilitate the,anomalous grain growth and donor incorporation. In order to optimise the PTCR anomaly the samples were annealed in an oxidising atmosphere. The samples were characterised using impedance spectroscopy and SEM. Results show that by the use of a specific sintering profile PTCR ceramics containing a higher amount of donor dopant can be prepared. (C) 1999 Elsevier Science Limited. All rights reserved.
引用
收藏
页码：913 / 916
页数：4
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