Segregation effects at vacancies in AlxGa1-xN and SixGe1-x alloys

被引：16

作者：

Boguslawski, P ^{[1
]}

Bernholc, J

机构：

[1] PAN, Inst Fizyki, PL-02668 Warsaw, Poland

[2] N Carolina State Univ, Dept Phys, Raleigh, NC 27695 USA

来源：

PHYSICAL REVIEW B | 1999年 / 59卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.59.1567

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

It is shown by quantum molecular-dynamics calculations that the formation energies of vacancies in semiconductor alloys strongly depend on the chemical identities of their nearest-neighbor atoms. For example, in AlxGa1-xN alloys the Ga-terminated vacancy is lower in energy than the Al-terminated one by 2.8 eV, while the corresponding difference in SixGe1-x is 1 eV. This leads to unexpectedly strong preferences for vacancy termination in semiconductor alloys: The results also predict that local segregation will occur at grain boundaries and dislocations. [S0163-1829(99)03103-3].

引用

页码：1567 / 1570

页数：4

共 50 条

[1] N-VACANCIES IN ALXGA1-XN
JENKINS, DW
DOW, JD
TSAI, MH
JOURNAL OF APPLIED PHYSICS, 1992, 72 (09) : 4130 - 4133
[2] Doping of AlxGa1-xN alloys
Stampfl, C
Neugebauer, J
Van de Walle, CG
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 59 (1-3): : 253 - 257
[3] Theoretical study of the AlxGa1-xN alloys
de Paiva, R
Alves, JLA
Nogueira, RA
de Oliveira, C
Alves, HWL
Scolfaro, LMR
Leite, JR
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 93 (1-3): : 2 - 5
[4] Ab initio calculations of vacancies in SixGe1-x
Dalpian, GM
Venezuela, P
da Silva, AJR
Fazzio, A
APPLIED PHYSICS LETTERS, 2002, 81 (18) : 3383 - 3385
[5] Surface segregation in pseudomorphic SixGe1-x crystals
Vasev, AV
Chikichev, IS
Chikichev, SI
CAS '97 PROCEEDINGS - 1997 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 20TH EDITION, VOLS 1 AND 2, 1997, : 459 - 462
[6] BAND STRUCTURES OF SIXGE1-X ALLOYS
KRISHNAMURTHY, S
SHER, A
CHEN, AB
PHYSICAL REVIEW B, 1986, 33 (02): : 1026 - 1035
[7] DISLOCATIONS AND THEIR DISSOCIATION IN SIXGE1-X ALLOYS
STENKAMP, D
JAGER, W
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1992, 65 (06): : 1369 - 1382
[8] CORE EXCITONS IN SIXGE1-X ALLOYS
NEWMAN, KE
DOW, JD
SOLID STATE COMMUNICATIONS, 1984, 50 (07) : 587 - 588
[9] Piezoresistivity of AlxGa1-xN layers and AlxGa1-xN/GaN heterostructures
Eickhoff, M
Ambacher, O
Krötz, G
Stutzmann, M
JOURNAL OF APPLIED PHYSICS, 2001, 90 (07) : 3383 - 3386
[10] Subband transitions in AlxGa1-xN/GaN/AlxGa1-xN and AlxGa1-xN/InN/AlGa1-xN single quantum wells
Premaratne, K
Gurusinghe, MN
Andersson, TG
SUPERLATTICES AND MICROSTRUCTURES, 2005, 38 (03) : 161 - 167

← 1 2 3 4 5 →