Gadolinia-doped ceria,Ce0.8Gd0.2O1.9-x (CGO), thin films deposited by spray pyrolysis and annealed to different degree of crystallinity between 0% and 95% are exposed to different etchants and etching methods. The attack of the etchants on the CGO thin films is analyzed with respect to changes in microstructure and in-plane electrical conductivity. It is found that amorphous CGO films are dissolved in hydrochloric acid after elongated etching times. Hydrofluoric acid severely attacks CGO thin films after already short times of exposure (1 min), more intense the less crystalline the thin film is. Ar ion etching smoothens the surface of the CGO thin films without considerable removal of material. No microstructural attack of NaOH, CHF3/O-2 and SF6/Ar is found. The electrical conductivity is in general only affected when microstructural changes are severe. Therefore, it is concluded that CGO thin films can be well used as functional layers in micro-fabricated devices and that micro-fabrication is, with the exception of hydrofluoric, not harmful for the electrical properties of crystalline CGO thin films. (C) 2011 Elsevier B.V. All rights reserved.
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Energy & Nucl Res Inst IPEN, POB 11049, BR-05422970 Sao Paulo, SP, BrazilEnergy & Nucl Res Inst IPEN, POB 11049, BR-05422970 Sao Paulo, SP, Brazil
Batista, R. M.
Ferreira, A. M. D. C.
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Univ S Paulo, Inst Chem, Ave Prof Lineu Prestes 748, BR-05508000 Sao Paulo, SP, BrazilEnergy & Nucl Res Inst IPEN, POB 11049, BR-05422970 Sao Paulo, SP, Brazil
Ferreira, A. M. D. C.
Muccillo, E. N. S.
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Energy & Nucl Res Inst IPEN, POB 11049, BR-05422970 Sao Paulo, SP, Brazil
Ctr Mat Sci & Technol, Ave Prof Lineu Prestes,2242,Cidade Univ, BR-05508000 Sao Paulo, SP, BrazilEnergy & Nucl Res Inst IPEN, POB 11049, BR-05422970 Sao Paulo, SP, Brazil
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Univ Delaware, Dept Mat Sci & Engn, Newark, DE 19716 USAUniv Delaware, Dept Mat Sci & Engn, Newark, DE 19716 USA
Jiang, Jun
Shen, Weida
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Univ Delaware, Dept Mech Engn, Newark, DE 19716 USAUniv Delaware, Dept Mat Sci & Engn, Newark, DE 19716 USA
Shen, Weida
Hertz, Joshua L.
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Univ Delaware, Dept Mat Sci & Engn, Newark, DE 19716 USA
Univ Delaware, Dept Mech Engn, Newark, DE 19716 USAUniv Delaware, Dept Mat Sci & Engn, Newark, DE 19716 USA