High power Sb-free quantum cascade laser emitting at 3.3 μm above 350 K

被引：37
|
作者：
Bismuto, A. [1 ]
Beck, M. [1 ]
Faist, J. [1 ]
机构：
[1] ETH, Inst Quantum Elect, CH-8093 Zurich, Switzerland
来源：
APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 19期
关键词：
D O I：
10.1063/1.3589355
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The design and implementation of a short wavelength strain-compensated quantum cascade laser based on In(0.72)Ga(0.28)As/In(0.52)Al(0.48)As-AlAs on InP is presented. We demonstrate watt-level room temperature emission at 3.3 mu m. Lasers operate in pulsed mode above 350 K. Threshold current densities of 3.6 kA/cm(2) and slope efficiencies of more than 600 mW/A are observed at room temperature. The laser performance is comparable with Sb-containing quantum cascade lasers. (C) 2011 American Institute of Physics. [doi:10.1063/1.3589355]
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页数：3
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