Advanced Monitoring of Trace Metals Applied to Contamination Reduction of Silicon Device Processing

The detrimental effects of metallic on certain key electrical parameters of silicon devices mandates the use of state-of-the-art characterization and metrology tools as well as appropriate control plans. Historically, this has been commonly achieved in-line on monitor wafers through a combination of Total Reflectance X-Ray Fluorescence (TXRF) and post anneal Surface Photo Voltage (SPV). On the other hand, VPD (Vapor Phase Decomposition) combined with ICP-MS (Inductively Coupled Mass Spectrometry) or TXRF is known to provide both identification and quantification of surface trace metals at lower detection limits. Based on these considerations the description of an advanced monitoring scheme using SPV, TXRF and automated VPD ICP-MS is described