Microstructure and properties of SCT thin film by RF sputtering method

被引：0
|
作者：
Kim, JS [1 ]
Cho, CN [1 ]
Shin, CG [1 ]
Kim, CH [1 ]
Choi, WS [1 ]
Song, MJ [1 ]
So, BM [1 ]
Lee, JU [1 ]
机构：
[1] Kwangwoon Univ, Dept Elect Engn, Seoul, South Korea
来源：
PROCEEDINGS OF THE 7TH INTERNATIONAL CONFERENCE ON PROPERTIES AND APPLICATIONS OF DIELECTRIC MATERIALS, VOLS 1-3 | 2003年
关键词：
SCT thin films; sputtering; leakage current;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The(Sr1-xCax)TiO3 (SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/SiO2/Si) using RF magnetron sputtering method. The structural and electric properties of SCT thin films were influenced with substitutional contents of Ca. The composition of SCT thin films were closed to stoichiometry(1.081similar to1.117 in A/B ratio). The maximum dielectric constant of thin film is obtained by annealing at 600[degreesC] of SCT15 thin film. The capacitance characteristics had a stable value below +/-5 [%]. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz]. In addition, leakage current increases and breakdown field decreases as a function of deposition temperature.
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收藏
页码：1100 / 1103
页数：4
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