Modification of Chemically Amplified Resists by Radical Copolymerization

被引:0
|
作者
Bulgakova, S. [1 ]
Johns, M. [1 ]
Kiseleva, E. [1 ]
机构
[1] NI Lobachevsky State Univ Nizhny Novgorod, Inst Chem Res, Nizhnii Novgorod 603950, Russia
来源
关键词
chemically amplified resists; image type inversion; methacrylic monomers; radical copolymerization;
D O I
10.1002/masy.201051019
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
Modification of a phenolic resist has been carried out by copolymerization with methacrylic monomers. Influence of irradiation source and its intensity has been studied by analyzing sensitive curves of a various resist composition. Inversion of imaging type at varying post exposure bake temperature has been investigated for resists based on copolymers containing methacrylic acid units, which has been related with crosslinking of macromolecules.
引用
收藏
页码:127 / 132
页数:6
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