Tunnel characteristics of partially gapped non-superconducting metals with charge- or spin-density waves

被引：5

作者：

Gabovich, AM

Voitenko, AI

机构：

[1] Institute of Physics, National Academy of Sciences, 252650 Kiev 22 GSP

来源：

PHYSICS LETTERS A | 1996年 / 223卷 / 03期

关键词：

D O I：

10.1016/S0375-9601(96)00687-1

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Current-voltage characteristics for symmetrical and non-symmetrical tunnel junctions involving non-superconducting partially dielectrized metals are calculated. Root singularities at eV = +/-Sigma and jumps at eV = +/- 2 Sigma, where V is the bias voltage, Sigma is the dielectric gap, and e is the elementary charge, are obtained for symmetrical junctions. For non-symmetrical ones current-voltage characteristics are non-symmetrical and depend on the sign of Sigma. The results obtained agree qualitatively with tunnel and point-contact measurements for layered dichalcogenides, NbSe3, and URu2Si2.

引用

页码：221 / 226

页数：6

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