Correlation between the temperature dependence of the band gap and the temperature dependence of the enthalpy of semiconductor crystals

被引:1
|
作者
Revinskii, AF [1 ]
机构
[1] Brest State Univ, Brest 224665, BELARUS
关键词
D O I
10.1134/1.1187514
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The first-principles pseudopotential method of density-functional theory is used to study electron-phonon interactions in silicon. The temperature shift of the indirect band gap, the phonon spectrum, and the enthalpy are calculated consistently within the density-functional theory. The relationship between the temperature dependence of the energy gap Delta E-g (T) and the temperature dependence of the enthalpy Delta H(T) is Delta H(T) = K\D Delta E-g (T)\. The physical origin of this correlation is discussed. (C) 1998 American Institute of Physics. [S1063-7826(98)00109-4].
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页码:917 / 920
页数:4
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