Irradiation of semiconductor devices using a 10 MeV travelling wave electron linear accelerator

A 10 MeV travelling wave electron linear accelerator, previously used for teaching, was adapted to irradiate semiconductor devices. Theoretical formulas and the EGS4 programs were used to validate the feasibility and superiority of using the 10 MeV electron linear accelerator for irradiating the semiconductor devices. Electron energies should be greater than 7 MeV to irradiate packaged high-power thyristors. Irradiation increased diodes' breakdown voltage and decreased their reverse recovery time when accelerated electrons irradiated packaged diodes. Controllable high-power packaged power thyristors are also irradiated to shorten the minority carrier lifetime and turn-off time. The resulting product quality reached expected requirements. (C) 2001 Elsevier Science B.V. All rights reserved.