Preparation and Photoluminescence of Praseodymium-Doped Bismuth Titanate Ferroelectric Thin Films

被引：4
|
作者：
Zhou, Hong [1 ]
Wu, Guangheng [1 ]
Chen, Xinman [1 ]
Ruan, Kaibin [1 ]
Bao, Dinghua [1 ]
机构：
[1] Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Sch Phys & Engn, Guangzhou 510275, Guangdong, Peoples R China
来源：
FERROELECTRICS | 2010年 / 406卷
关键词：
ELECTRICAL-PROPERTIES; LUMINESCENCE; EXCITATION;
D O I：
10.1080/00150193.2010.484360
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Bi4-xPrxTi3O12 thin films were prepared by a chemical solution deposition method and their photoluminescence properties are investigated. The layered perovskite structure of the films is not destroyed by substituting Bi with Pr. The emission lines at 493, 533 and 612 nm are observed, and they can be assigned to the transitions of 3P03H4, 3P03H5 and 1D23H4 of Pr3+ ions. The quenching concentrations are identified to be x = 0.09 and 0.03 for the emissions at 493 and 612 nm. The crystal field plays a crucial role in the luminescence properties of Bi4-xPrxTi3O12 thin films.
引用
收藏
页码：108 / 113
页数：6
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